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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * * * * Silicon NPN, To-72 packaged VHF/UHF Transistor Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 1 3 4 Power Gain, GPE = 19 dB (typ) @ 200 MHz 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 50 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25 C Derate above 25 C 200 1.14 mWatts mW/ C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. BFY90 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol BVCEO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) Value Min. 15 Typ. Max. 10 Unit Vdc nA (on) HFE DC Current Gain (IC = 25 mAdc, VCE = 1.0 Vdc) 20 125 - DYNAMIC Symbol fT NFmin Test Conditions Current-Gain - Bandwidth Product (IC = 25 mAdc, VCE = 5 Vdc, f = 500 MHz) (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 500 MHz Value Min. 1.3 Typ. 2.5 Max. 5.0 2.0 Unit GHz dB pF Cibo Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) - Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. BFY90 FUNCTIONAL Symbol Test Conditions Maximum Unilateral Gain (1) Maximum Stable Gain Insertion Gain IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz IC = 8 mAdc, VCE = 10 Vdc, f = 200 MHz Value Min. 15 Typ. 20 22 16 Max. Unit dB dB dB G U max MSG |S21| 2 Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 8 mA f S11 S21 S12 S22 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .574 .374 .292 .259 .221 .198 .185 .187 .185 .177 -79 -130 -172 142 96 53 8.8 -38 -91 -136 |S21| 10.65 7.01 4.44 3.62 3.02 2.57 2.08 1.90 1.79 1.70 127 105 97 92 88 80 76 76 72 61 |S12| .023 .036 .047 .063 .072 .082 .087 .104 .117 .118 67 60 66 63 60 58 58 58 50 44 |S22| .788 .682 .654 .640 .617 .614 .611 .621 .620 .632 -56 -97 -136 -178 140 98 55 10 -35 -78 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. BFY90 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. |
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